![]() We tested InGaO 3(ZnO) m epitaxial films, where m = 4 and 5, as I believed the unique local structure around Ga 3+ would help lower the carrier concentration. Indium oxide is a typical transparent conductive oxide with a large mobility, but reducing its excessive carrier concentration is difficult due the ease with which oxygen vacancies form. To develop high-mobility TFTs using transparent conductive oxides, the major issue was their high carrier concentrations (the TFTs can’t be turned off). By 2004, for example, the paper had received only 4 citations, and 2 of those were self-citations!Īfter a few years verifying the validity of the hypothesis, we started research on transparent oxide TFTs. The idea and experimental results were published in the May issue of the Journal of Non-Crystalline Solids in 1996, but gained little interest from the research community. Testing their Hall mobility, these amorphous thin films showed values higher than 10 cm 2 V –1 s –1, which is comparable to polycrystalline thin films. To verify this hypothesis, I, together with my research group, selected and sputtered a range of metal oxide thin films, including CdO–GeO 2. As such, I hoped that when going from their ordered crystalline state to their disordered amorphous state, these oxide semiconductors might still show a high mobility. In certain oxide materials containing p-block metal cations, the vacant metal s-orbital that predominantly makes up the conduction band minimum is spherical and spatially spread, making their overlap insensitive to bonding angle variation. I thought an ionic semiconductor with a wide bandgap might be different because the conduction and valence bands are made up of orbitals that have different characteristics. ![]()
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